Cobham plc

Fast Switching PIN Diodes

Chip Diodes		Chip and Packaged Diodes
Characteristics at 25°C	Gold dia Ø	Breakdown voltage Vbr	Junction capacitance Cj		Series resistance Rsf	Minority carrier lifetime TI	Reverse switching time Tcr
Test conditions		Ir = 10 μA	Vr = 50V F=1MHz		If= 10mA F=120MHz	If = 10mA Ir=6mA	If = 20mA
							Vr= 10V
							50 W
Case C2a	μm	V	pF		W	ns	ns
Type	typ.	min.	typ.	max	max	max	typ.
EH50151	55	150	0.04	0.06	2.0	200	20
EH50152	60		0.06	0.08	1.7	230	23
EH50153	70		0.08	0.12	1.5	300	30
EH50154	90		0.12	0.17	1.4	500	50
EH50155	110		0.17	0.23	1.0	550	55
EH50156	130		0.23	0.40	0.8	800	80
EH50157	150		0.40	0.60	0.6	950	95
EH50201	60	200	0.04	0.06	2.3	300	30
EH50202	65		0.06	0.08	2.1	400	40
EH50203	75		0.08	0.12	1.5	500	50
EH50204	100		0.12	0.17	1.3	650	65
EH50205	120		0.17	0.23	1.0	800	80
EH50206	150		0.23	0.40	0.8	950	95
EH50207	170		0.40	0.60	0.7	1050	100
EH50251	65	250	0.04	0.06	2.4	330	33
EH50252	75		0.06	0.08	2.2	500	50
EH50253	100		0.08	0.12	2.0	900	90
EH50254	130		0.12	0.17	1.4	900	90
EH50255	160		0.17	0.23	0.9	1000	100
EH50256	180		0.23	0.40	0.8	1150	110

Temperature ranges
Operating junction (Tj): -55°C to +175°C
Storage: -65°C to +200°C

Last Modified: Tuesday, November 02, 2010:7:13 PM